| 发明名称 |
TOP ANTI-REFLECTIVE COATING COMPOSITION AND METHOD FOR PATTERN FORMATION OF SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
<p>Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator (II) and an organic solvent (III). Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator of formula (II) (where n is 7-25) and an organic solvent (III). An independent claim is also included for forming a pattern of a semiconductor device comprising applying a photoresist to a semiconductor substrate on which an underlying structure is formed; applying (A) to form a top anti-reflective coating; exposing the photoresist to light; and developing the photoresist to form a photoresist pattern. [Image].</p> |
| 申请公布号 |
KR20060020242(A) |
申请公布日期 |
2006.03.06 |
| 申请号 |
KR20040069044 |
申请日期 |
2004.08.31 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG, JAE CHANG;BOK, CHEOL KYU;KIM, SAM YOUNG;LIM, CHANG MOON;MOON, SEUNG CHAN |
| 分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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