发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING LANDING PAD |
摘要 |
<p>A semiconductor device can be provided comprising a semiconductor substrate having an upper surface. A plurality of adjacent line patterns are formed on the upper surface of the semiconductor substrate. Each line pattern includes a line having a capping layer pattern stacked thereon. A material layer covers the upper surface of the semiconductor substrate having the line patterns. A pad contact hole is located between the line patterns within a region of the material layer. The pad contact hole includes a lower opening between the line patterns and an upper opening located above the lower opening. A barrier layer is formed on a side wall defining the upper opening. A landing pad substantially fills the lower opening and the upper opening defined by the barrier layer.</p> |
申请公布号 |
KR100557997(B1) |
申请公布日期 |
2006.03.06 |
申请号 |
KR20030006023 |
申请日期 |
2003.01.29 |
申请人 |
|
发明人 |
|
分类号 |
H01L23/522;H01L27/108;H01L21/60;H01L21/768;H01L21/8234;H01L21/8242 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|