发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING LANDING PAD
摘要 <p>A semiconductor device can be provided comprising a semiconductor substrate having an upper surface. A plurality of adjacent line patterns are formed on the upper surface of the semiconductor substrate. Each line pattern includes a line having a capping layer pattern stacked thereon. A material layer covers the upper surface of the semiconductor substrate having the line patterns. A pad contact hole is located between the line patterns within a region of the material layer. The pad contact hole includes a lower opening between the line patterns and an upper opening located above the lower opening. A barrier layer is formed on a side wall defining the upper opening. A landing pad substantially fills the lower opening and the upper opening defined by the barrier layer.</p>
申请公布号 KR100557997(B1) 申请公布日期 2006.03.06
申请号 KR20030006023 申请日期 2003.01.29
申请人 发明人
分类号 H01L23/522;H01L27/108;H01L21/60;H01L21/768;H01L21/8234;H01L21/8242 主分类号 H01L23/522
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