发明名称 MICROPATTERN FORMATION MATERIAL AND METHOD OF MICROPATTERN FORMATION
摘要 A method of micropattern formation, comprising forming resist pattern (3) constituted of a chemical amplification type photoresist on substrate of 6 inches or more (1); applying onto the resist pattern (3) a micropattern formation material composed of a water soluble resin, a water soluble crosslinking agent and water or a mixed solvent of water and water soluble organic solvent so as to form coating layer (4); baking the chemical amplification type photoresist pattern and the coating layer; and developing the coating layer after baking to thereby form a miniaturized pattern, wherein a water soluble resin exhibiting, in DSC curve, a melting heat peak temperature which is higher than the baking temperature at the above baking step and exceeds 130°C is used as the water soluble resin of the micropattern formation material.
申请公布号 KR20060020669(A) 申请公布日期 2006.03.06
申请号 KR20057023678 申请日期 2005.12.09
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 TAKAHASHI KIYOHISA;TAKANO YUSUKE
分类号 H01L21/027;G03F7/00;G03F7/40 主分类号 H01L21/027
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