发明名称 |
METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN |
摘要 |
A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
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申请公布号 |
KR20060020621(A) |
申请公布日期 |
2006.03.06 |
申请号 |
KR20057021303 |
申请日期 |
2004.04.29 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
XIAO HANZHONG;ZHU HELEN H.;TANG KUO LUNG;SADJADI S.M. REZA |
分类号 |
G03F7/09;G03F7/36;H01L21/027;H01L21/033;H01L21/311;H01L21/768 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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