发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR PROBE WITH RESISTIVE TIP |
摘要 |
A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured. |
申请公布号 |
KR20060019365(A) |
申请公布日期 |
2006.03.03 |
申请号 |
KR20040068007 |
申请日期 |
2004.08.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, CHUL MIN;PARK, HONG SIK;KO, HYOUNG SOO;HONG, SEUNG BUM |
分类号 |
H01L21/66;G01R1/073;G11B9/14 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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