发明名称 METHOD OF FABRICATING SEMICONDUCTOR PROBE WITH RESISTIVE TIP
摘要 A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
申请公布号 KR20060019365(A) 申请公布日期 2006.03.03
申请号 KR20040068007 申请日期 2004.08.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, CHUL MIN;PARK, HONG SIK;KO, HYOUNG SOO;HONG, SEUNG BUM
分类号 H01L21/66;G01R1/073;G11B9/14 主分类号 H01L21/66
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