| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method capable of performing a stable film deposition and obtaining a high-definition film even when using a raw material having low decomposition temperature. SOLUTION: The chemical vapor deposition method is characterized in that the pressure in a reaction chamber is varied by being reached to a first set pressure and a second set pressure, which is higher than the first set pressure, alternately. COPYRIGHT: (C)2006,JPO&NCIPI
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