| 摘要 |
A semiconductor storage device includes first and second additional FETs disposed in parallel on one of potential lines for supplying first and second drive potentials to each SRAM memory cell. When each memory cell is selected, a selection signal is supplied to the gate terminal of the first additional FET through a selection signal supply line to turn on the first additional FET. A bias generation circuit is configured to generate a bias potential and supply it to the gate terminal of the second additional FET. The bias potential is generated to reflect one or both of fluctuations in the potential difference between the first and second drive potentials, and variations in the threshold voltage of FETs included in the cross-feedback circuit of each memory cell.
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