发明名称 |
Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component |
摘要 |
A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
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申请公布号 |
US2006043470(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20050201874 |
申请日期 |
2005.08.11 |
申请人 |
SCHULZE HANS-JOACHIM;LUTZ JOSEF;NIEDERNOSTHEIDE FRANZ-JOSEF;SIEMIENIEC RALF |
发明人 |
SCHULZE HANS-JOACHIM;LUTZ JOSEF;NIEDERNOSTHEIDE FRANZ-JOSEF;SIEMIENIEC RALF |
分类号 |
H01L29/76;H01L21/22 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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