Method for manufacturing a pixel array of top emitting OLED

摘要

A process for manufacturing a pixel array of top-emitting OLED pixel is provided. The process comprises: providing a substrate having at least two poly-silicon islands defined thereon, and defining an implantation region on the substrate; forming a gate insulator layer and a gate metal layer sequentially, and then defining a gate; carrying out an implantation process for forming the doped region; forming an inter-layer dielectric (ILD) layer and etching a plurality of contact holes thereon; forming a source/drain metal layer and defining a source/drain pattern thereon; wherein the patterned source/drain metal layer extends to the pixel array of the top-emitting OLED so as to be employed as a bottom electrode of the top-emitting OLED. The characteristic of the present invention is that the bottom electrode is substantially the portion of the source/drain extending to the pixel array of the top-emitting OLED, so that the array manufacturing can save at least two masks.