Production of a vertical MOS transistor comprises epitaxially depositing an intrinsic sacrificial layer made from silicon-germanium on a silicon substrate, depositing a high doped silicon layer and further processing

摘要

Production of a vertical MOS transistor comprises epitaxially depositing an intrinsic sacrificial layer (4) made from Si1-xGex on a silicon substrate (1), depositing a high doped silicon layer (3) on the sacrificial layer, anisotropically etching a mesa structure including silicon regions (2, 3) and the sacrificial layer, growing an intrinsic silicon film (5) on the mesa structure, forming a MOS gate electrode (6, 7) by depositing over the intrinsic silicon film and etching to form an opening (9) in the mesa structure.