| 发明名称 |
ELECTRODE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electrode structure of a semiconductor device and a method of manufacturing the same. <P>SOLUTION: In the semiconductor device, a photosensitive film (adhesion reinforcing polymer layer) 216A is additionally applied on the surface of an electrode. A part of the photosensitive film 216A is uniformly removed on the electrode by a photolithography process. The electrode may be a solder ball 214A or a solder bump. The semiconductor device may be a wafer level package or a flip chip package. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2006060219(A) |
申请公布日期 |
2006.03.02 |
| 申请号 |
JP20050236150 |
申请日期 |
2005.08.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHUNG HYUN-SOO;SIM SUNG-MIN;CHO TOGEN;PARK MYEONG-SOON;SONG YOUNG-HEE |
| 分类号 |
H01L21/60;H01L23/12 |
主分类号 |
H01L21/60 |
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