发明名称 |
THIN FILM SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, ELECTRIC OPTICAL DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film semiconductor device comprising a protective circuit element of superior reliability which constitutes a protective circuit for protecting an internal circuit well from a surge voltage and, even when the protective circuit has been broken down due to an excessive voltage, no failure is caused in a circuit operation. <P>SOLUTION: In the thin film semiconductor device provided with a base substance and a semiconductor film formed on the base substance, the internal circuit (main circuit part) 17 on the base substance, a protective circuit 18 and a terminal 19 are provided. The protective circuit 18 is provided with protective circuit elements 181 and 182 comprising a PIN diode having the semiconductor film and a floating electrode arranged while facing an I layer of the PIN diode with an insulating film between. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006060191(A) |
申请公布日期 |
2006.03.02 |
申请号 |
JP20050114230 |
申请日期 |
2005.04.12 |
申请人 |
SEIKO EPSON CORP |
发明人 |
EGUCHI TSUKASA;MATSUMOTO TOMOTAKA;FUJITA SHIN |
分类号 |
H01L29/786;G02F1/1345;G02F1/1368;H01L21/336;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/861 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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