发明名称 THIN FILM SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, ELECTRIC OPTICAL DEVICE, AND ELECTRONIC APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film semiconductor device comprising a protective circuit element of superior reliability which constitutes a protective circuit for protecting an internal circuit well from a surge voltage and, even when the protective circuit has been broken down due to an excessive voltage, no failure is caused in a circuit operation. <P>SOLUTION: In the thin film semiconductor device provided with a base substance and a semiconductor film formed on the base substance, the internal circuit (main circuit part) 17 on the base substance, a protective circuit 18 and a terminal 19 are provided. The protective circuit 18 is provided with protective circuit elements 181 and 182 comprising a PIN diode having the semiconductor film and a floating electrode arranged while facing an I layer of the PIN diode with an insulating film between. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006060191(A) 申请公布日期 2006.03.02
申请号 JP20050114230 申请日期 2005.04.12
申请人 SEIKO EPSON CORP 发明人 EGUCHI TSUKASA;MATSUMOTO TOMOTAKA;FUJITA SHIN
分类号 H01L29/786;G02F1/1345;G02F1/1368;H01L21/336;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/861 主分类号 H01L29/786
代理机构 代理人
主权项
地址