Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device

摘要

Variation in the thickness of the deposited films depending on number of the processed product wafers in the deposition process employing a batch type CVD apparatus is inhibited to provide a manufacture of the film having a predetermined thickness with an improved reproducibility. The deposition apparatus 100 comprises a deposition reactor 101 that is capable of containing product wafers 107 and dummy wafers 109 , boat 105 , on which product wafer 107 or the dummy wafer 109 is mounted, and a heater 111 provided outside of the deposition reactor 101 along a reactor wall 103 . Further, the deposition apparatus 100 comprises a gas supplying system including a high-k source material supplying line 113 and SiO₂ source material supplying line 115 , and a controller 121 that provides a control to the supply of a gas from the gas supplying system to the deposition reactor 101.