发明名称 INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To enable a semiconductor integrated circuit device having semiconductor integrated circuit elements with high electrode arrangement density to connect to a printed wiring board having lower density than the electrode arrangement density. <P>SOLUTION: The semiconductor integrated circuit device comprises a monolithic integrated circuit element 4, and a wiring board 6 having an electrode wiring layer 42 for making an external electrode. The plane positional relationship at each of the electrodes 28 of the semiconductor integrated circuit element 4 is made different mutually from the plane positional relationship at the electrode wiring layers of the wiring board 6. Each electrode 28 and an electrode corresponding to each electrode 44 of the wiring board are mutually and electrically connected via each wiring layer of the wiring board 6 at least and metal bumps 32 and 38. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006059943(A) 申请公布日期 2006.03.02
申请号 JP20040239056 申请日期 2004.08.19
申请人 NORTH:KK;TOHOKU UNIV;21 AOMORI SANGYO SOGO SHIEN CENTER 发明人 UCHIDA TATSUO;IIJIMA ASAO;SUZUKI YOSHITO;OSAWA KENJI
分类号 H01L23/12;G06K19/07;G06K19/077 主分类号 H01L23/12
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