发明名称 Method of cleaning semiconductor substrate, and method of manufacturing semiconductor device and semiconductor substrate processing apparatus for use in the same
摘要 A semiconductor substrate processing apparatus is provided with a cleaning process chamber containing a semiconductor substrate for performing a cleaning process on the semiconductor substrate. Connected to the cleaning process chamber is a cleaning liquid feeding pipe for supplying a cleaning liquid to the semiconductor substrate. A gas dissolving unit is provided in the midpoint of the cleaning liquid feeding pipe for dissolving a prescribed gas in ultrapure water. An inert gas or a reducing gas is dissolved as a prescribed gas in ultrapure water. A control unit is provided having a function of supplying the cleaning liquid with the prescribed gas dissolved therein to the semiconductor substrate subjected to the cleaning process before performing a dry process. Therefore, the surface of the semiconductor substrate is free from stains. Moreover, a metal interconnection does not elude.
申请公布号 US2006046500(A1) 申请公布日期 2006.03.02
申请号 US20050210737 申请日期 2005.08.25
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIYAMOTO MAKOTO
分类号 H01L21/302;H01L21/461;H01L21/4763 主分类号 H01L21/302
代理机构 代理人
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