发明名称 |
MAINTAINING UNIFORM CMP HARD MASK THICKNESS |
摘要 |
A chemical mechanical polishing (CMP) step is used to remove excess conductive material (e.g., Cu) overlying a low-k or ultralow-k interlevel dielectric layer (ILD) layer having trenches filled with conductive material, for a damascene interconnect structure. A reactive ion etch (RIE) or a Gas Cluster Ion Beam (GCIB) process is used to remove a portion of a liner which is atop a hard mask. A wet etch step is used to remove an oxide portion of the hard mask overlying the ILD, followed by a final touch-up Cu CMP (CMP) step which chops the protruding Cu patterns off and lands on the SiCOH hard mask. In this manner, processes used to remove excess conductive material substantially do not affect the portion of the hard mask overlying the interlevel dielectric layer.
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申请公布号 |
US2006043590(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040711145 |
申请日期 |
2004.08.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN STEVEN SHYNG-TSONG T.;KUMAR KAUSHIK A.;GRECO STEPHEN E.;PONOTH SHOM;SPOONER TERRY A.;RATH DAVID L.;TSENG WEI-TSU |
分类号 |
H01L21/4763;H01L21/31;H01L21/469;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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