发明名称 |
Deposition methods using heteroleptic precursors |
摘要 |
An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and/or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and/or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and/or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and/or imino ligand.
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申请公布号 |
US2006046521(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040932149 |
申请日期 |
2004.09.01 |
申请人 |
VAARTSTRA BRIAN A;WESTMORELAND DONALD;MARSH EUGENE P;UHLENBROCK STEFAN |
发明人 |
VAARTSTRA BRIAN A.;WESTMORELAND DONALD;MARSH EUGENE P.;UHLENBROCK STEFAN |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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