发明名称 Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
摘要 A process for pre-tapering features in a material, such as silicon, prior to etching shallow trenches in the material includes opening a hard mask over the material such that first pre-tapered features are formed in the material. The process can include a hard mask overetch step, which modifies the profile of the first pre-tapered features to form second pre-tapered features in the material. Shallow trench isolation features are formed in the pre-tapered material.
申请公布号 US2006043066(A1) 申请公布日期 2006.03.02
申请号 US20040925921 申请日期 2004.08.26
申请人 KAMP THOMAS A 发明人 KAMP THOMAS A.
分类号 B44C1/22;H01L21/302 主分类号 B44C1/22
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