Data storage circuit for computer has system for evaluation of data stores in CBRAM-resistor storage cell and has bit lines and word lines crossing at right-angles with evaluation circuit on each bit line

摘要

The data storage circuit incorporates a storage cell matrix (1) with vertical word lines (WL) and horizontal bit lines (BL) with PMC resistors (2) connected across their crossing points. The resistors consists of CBRAM-resistor elements. A reference word line (RWL) crosses the horizontal bit lines on a first side of the storage cell matrix and there are reference resistors (6) at the crossing points. Amplifiers (5) are connected to the horizontal bit lines on the second side of the storage cell matrix and are connected to data evaluation circuits (8). The bottom ends of the word lines are connected to voltage sources (3,7) with connections to an address decoder (4) and a control circuit (9).