MAGNETIC TUNNEL JUNCTION ELEMENT STRUCTURES AND METHODS FOR FABRICATING THE SAME

摘要

Magnetic tunnel junction ("MTJ") element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure (10) may comprise a crystalline pinned layer (26), an amorphous fixed layer (30), and a coupling layer (28) disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer (30) is antiferromagnetically coupled to the crystalline pinned layer (26). The MTJ element further comprises a free layer (34) and a tunnel barrier layer (32) disposed between the amorphous fixed layer and the free layer. Another MTJ element structure (60) may comprise a pinned layer (26), a fixed layer (30) and a non-magnetic coupling layer (28) disposed therebetween. A tunnel barrier layer (32) is disposed between the fixed layer (30) and a free layer (34). An interface layer (62) is disposed adjacent the tunnel barrier (32) layer and a layer of amorphous material (30). The first interface layer (62) comprises a material having a spin polarization that is higher than that of the amorphous material (30).