摘要 |
<p>A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.</p> |