| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory element, exhibiting stabilized operational characteristics with low power consumption in which Ion/Ioff is high and variations thereof is small over a large number of operation times. <P>SOLUTION: The nonvolatile memory element comprises a lower electrode 21 composed of a conductive substance, a dielectric layer 22 formed on the lower electrode 21, a voltage control layer 23 formed on the dielectric layer 22 and containing an antiferromagnetic substance, and an upper electrode 24 formed on the voltage control layer 23 and composed of a conductive substance. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
