| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the reliability of a capacitor including a capacitance film formed by an atomic layer depositing method. <P>SOLUTION: In the method for manufacturing a capacitor, a capacitance film is formed by an atomic layer depositing method by using organic raw materials containing one or two or more metallic elements selected from a group constituted of Zr, Hf, La and Y as film formation gas. This method for manufacturing the capacitor comprises steps (S100 and S102) for acquiring a boundary temperature T(°C) at which a film thickness starts to increase based on correlation data between a film formation temperature in the atomic layer depositing method using the film formation gas and the film formation speed of the capacitance film formed in the film formation temperature, and steps (S104 to S112) for forming the capacitance film by the atomic layer depositing method using the film formation gas in a temperature which is not lower than (T-20)(°C) and not higher than (T+20)(°C). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
