| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit of memory mixed mounted type capable of relieving defect of a memory while suppressing the increase of a circuit area. SOLUTION: Before access to a memory section 1 is started, defect specifying data for specifying a storage area having the defect in the memory section 1 are transferred to a scan flip-flop SFF 2 from a fuse circuit 10. When presence of defect in the write-in objective storage area is determined by a defect determination circuit 2 at the writing access to the memory section 1, the write data to the memory section 1 are written into the scan flip-flop SFF 5. When presence of defect in the read objective storage area is determined by the defect discriminating circuit 2 at the reading access to the memory section 1, the data written into the scan flip-flop SFF 5 are outputted from a selection circuit 7 as the read data of the memory section 1. COPYRIGHT: (C)2006,JPO&NCIPI
|
