发明名称 SINGLE-ENDED OPTICALLY BIASED THREE TRANSISTOR FULLY STATIC RAM CELL
摘要 A single ended three transistor static RAM cell comprises two cross coupled MOS transistors and one select MOS transistor connected to drain of one of the aforementioned MOS transistors wherein drains of both cross coupled MOS transistors are each connected to anode of one of two PN diodes functioning as constant current loads when exposed to continuous light from LED diode.
申请公布号 WO2006021827(A1) 申请公布日期 2006.03.02
申请号 WO2004IB02739 申请日期 2004.08.23
申请人 KRILIC, GORAN 发明人 KRILIC, GORAN
分类号 (IPC1-7):G11C11/412;G11C11/413;G11C11/42 主分类号 (IPC1-7):G11C11/412
代理机构 代理人
主权项
地址