SEMICONDUCTOR DEVICE AND MODULE USING THE SAME

摘要

A semiconductor device (29) is provided with two level shift switches (28A, 28B) having a first electrode, a second electrode, a control electrode and a signal outputting electrode. The switches are also provided with a first semiconductor region which constitutes transistor element parts (28a, 28b), which are arranged between the first electrode and the signal outputting electrode and are controlled to carry electricity or not by corresponding to an input signal to the control electrode, and resistor element parts (Ra, Rb) arranged between the signal outputting electrode and the second electrode. The first semiconductor region is composed of a wide band gap semiconductor. The semiconductor device is also provided with a diode (23) wherein a cathode side electrode, an anode side electrode and a second semiconductor region are arranged and the second semiconductor region is composed of a wide band gap semiconductor.