Lateral semiconductor component to act as a field-effect transistor has a semiconductor body with first and second sides forming front and rear sides respectively

摘要

Near a front side there are first (20) and second (30) doped connection zones (DCZ) inserted in a semiconductor body (SB), which form a source zone in a MOSFET and a drain zone as well as emitter and collector zones in an insulated gate bipolar transistor. In the SB's first lateral direction running between the DCZ there is a drift zone (40) extending between the DCZ.