发明名称 Semiconductor light-emitting device e.g. laser diode, comprises light-impervious substrate, bonding structure, and fluorescent material structure overlaying and in contour conformity with semiconductor light-emitting stack
摘要 <p>A semiconductor light-emitting device comprises light-impervious substrate; bonding structure; semiconductor light-emitting stack; and fluorescent material structure overlaying and in contour conformity with the semiconductor light-emitting stack. The fluorescent material structure comprises a fluorescent material for absorbing original light and generating converted light. A semiconductor light-emitting device (10) comprises: (A) light-impervious substrate (11); (B) bonding structure (12); (C) semiconductor light-emitting stack (13) for emitting original light, separated from a growth substrate and bonded to the light-impervious substrate through the bonding structure; and (D) fluorescent material structure (14) overlaying the semiconductor light-emitting stack, comprising a fluorescent material (1401) for absorbing the original light and generating converted light, and being in contour conformity with the semiconductor light-emitting stack. An independent claim is also included for producing a semiconductor light-emitting device comprising: (A) separating a semiconductor light-emitting stack from a growth substrate; (B) bonding the semiconductor light-emitting stack to a light-impervious substrate; and (C) forming a fluorescent material structure over the semiconductor light-emitting stack.</p>
申请公布号 DE102005040522(A1) 申请公布日期 2006.03.02
申请号 DE20051040522 申请日期 2005.08.26
申请人 EPISTAR CORP., HSINCHU 发明人 HSIEH, MIN-HSUN;TSAI, CHIA-FEN
分类号 H01L33/50;H01L33/60;H01S5/028 主分类号 H01L33/50
代理机构 代理人
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