MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A memory cell includes a plurality of magnetoresistive elements (5) and a plurality of layered ferri- magnetic structure bodies (8). The plurality of magnetoresistive elements (5) are arranged at positions corresponding to the positions where a plurality of first wires (27) extending in the first direction Y intersect a plurality of second wires (26) extending in the second direction X substantially vertical to the first direction Y. The plurality of layered ferri-magnetic structure bodies (8) are arranged at a predetermined distance from the magnetoresistive elements (5) so as to correspond to the respective magnetoresistive elements (5) and have a layered ferri-magnetic structure. The magnetoresistive elements (5) have a free layer (1) having a layered ferri-magnetic structure, a fixed layer (3), and a non-magnetic layer (2) arranged between the free layer (1) and the fixed layer (3).