| 摘要 |
The present invention is directed to a damascene process using different kinds of metals is provided. An interlayer dielectric is formed to cover a semiconductor substrate. A contact hole is formed to expose the semiconductor substrate through the interlayer dielectric. A groove is formed to overlap the contact hole. A first barrier metal layer is conformally formed. A first seed layer is conformally formed. A first conductive layer is formed to fill a contact hole below the groove. A second conductive layer is formed to fill the groove. According to the damascene process, a CMP process for a tungsten layer is not needed such that total process cost is reduced and the overall general process is simplified.
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