| 摘要 |
Disclosed herein is a method for forming a tungsten nitride film by introducing a tungsten precursor and a hydrazine derivative as a nitrogen source in a specific ratio into a reaction chamber, followed by deposition onto a semiconductor substrate at a given temperature by metal organic chemical vapor deposition (MOCVD) wherein the nitrogen source is a hydrazine derivative. According to the disclosed method, the use of the hydrazine derivative enables formation of a tungsten nitride film having a sufficient thickness even at low temperatures and using lesser amounts of the hydrazine derivative as compared to other nitrogen sources.
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