发明名称 |
Photoelectric conversion device, method for manufacturing the same and image pickup system |
摘要 |
An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
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申请公布号 |
US2006043442(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20050214846 |
申请日期 |
2005.08.31 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YUZURIHARA HIROSHI;TAMURA SEIICHI;MISHIMA RYUICHI |
分类号 |
H01L31/062;H01L27/146;H01L31/10;H04N5/335;H04N5/361;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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