发明名称 |
Facilitating removal of sacrificial layers via implantation to form replacement metal gates |
摘要 |
Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.
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申请公布号 |
US2006046448(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040925517 |
申请日期 |
2004.08.25 |
申请人 |
BARNS CHRIS E;PRINCE MATT;DOCZY MARK L;BRASK JUSTIN K;KAVALIEROS JACK |
发明人 |
BARNS CHRIS E.;PRINCE MATT;DOCZY MARK L.;BRASK JUSTIN K.;KAVALIEROS JACK |
分类号 |
H01L21/3205;H01L21/336;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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