发明名称 |
Group III nitride semiconductor substrate and its manufacturing method |
摘要 |
The present invention provides a group III nitride semiconductor substrate with low defect density as well as small warp and a process for producing the same; for instance, the process according to the present invention comprises the following series of steps of: forming a metallic Ti film 63 on a sapphire substrate 61 , followed by treatment of nitration to convert it into a TiN film 64 having fine pores; thereafter growing a HVPE-GaN layer 66 thereon; forming voids 65 in the HVPE-GaN layer 66 by means of effects of the metallic Ti film 63 and the TiN film 64 ; and peeling the sapphire substrate 61 from the region of the voids 65 to remove it therefrom.
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申请公布号 |
US2006046325(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20030519571 |
申请日期 |
2003.07.01 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
USUI AKIRA;SHIBATA MASATOMO;OSHIMA YUICHI |
分类号 |
C30B29/38;H01L21/00;C23C16/01;C23C16/30;C30B25/02;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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