发明名称 Stacked microelectronic layer and module with three-axis channel T-connects
摘要 A method for interconnecting stacked layers containing integrated circuit die and a device built from the method is disclosed. The stacked layers are bonded together to form a module whereby individual I/O pads of the integrated circuit die are rerouted to at least one edge of the module. The rerouted leads terminate at the edge. Channels are formed in a surface of the module or on the surface of a layer whereby the rerouted leads are disposed within the channel. The entire surface of the edge or layer is metalized and a predetermined portion of the metalization removed such that the rerouted leads within each channel are electrically connected to each other.
申请公布号 US2006043563(A1) 申请公布日期 2006.03.02
申请号 US20050259683 申请日期 2005.10.25
申请人 发明人 GANN KEITH D.;BOYD W. E.
分类号 H01L23/02 主分类号 H01L23/02
代理机构 代理人
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