MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

摘要

Disclosed is a magnetoresistive device comprising a free layer, a fixed layer and a nonmagnetic layer interposed between the free layer and the fixed layer. The free layer comprises a first magnetic layer, a second magnetic layer, a third magnetic layer, a first nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled so that the spontaneous magnetization has a helical structure.