发明名称 Gate coupling in floating-gate memory cells
摘要 Methods and apparatus utilizing a stepped floating gate structure to facilitate reduced spacing between adjacent cells without significantly impacting parasitic capacitance. The stepped structure results in a reduced surface area of a first floating gate in close proximity to an adjacent floating gate with substantially no reduction in coupling area, thus facilitating a reduction in parasitic capacitance leading to improved gate coupling characteristics. Also, because of the reduced surface area exposed to adjacent floating gates, the floating gates may be formed with reduced spacing, thus further leading to improved gate coupling characteristics.
申请公布号 US2006043458(A1) 申请公布日期 2006.03.02
申请号 US20040932954 申请日期 2004.09.02
申请人 MICRON TECHNOLOGY, INC. 发明人 RUDECK PAUL J.
分类号 H01L21/336;H01L29/788 主分类号 H01L21/336
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