发明名称 MEMORY UNIT WITH SENSING CURRENT STABILIZATION
摘要 A memory unit with sensing current stabilization includes: a memory cell; a reference cell for providing a reference current; a current mirror coupled to the memory cell and the reference cell for generating a differential current according to the reference current and a cell current of the memory cell; and a sense amplifier coupled to the current mirror for generating an output voltage according to the differential current.
申请公布号 US2006044902(A1) 申请公布日期 2006.03.02
申请号 US20040904381 申请日期 2004.11.08
申请人 SHEN CHIUN-CHI;LU CHUN-HUNG;HO CHIEN-HUNG 发明人 SHEN CHIUN-CHI;LU CHUN-HUNG;HO CHIEN-HUNG
分类号 G11C7/00 主分类号 G11C7/00
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