发明名称 Control of breakdown voltage for microelectronic packaging
摘要 Reduce breakdown voltage and control breakdown path for electrostatic discharge to terminals of microelectronic packages, such as no-connect Land Grid Array (LGA) pads. In one embodiment, solder resist openings with a small separation distance are used to provide an air breakdown path between a no-connect LGA pad and the surrounding metal and to reduce the breakdown voltage. In one implementation, the no-connect pad has a non-round shape with a protruding portion on the dielectric layer. The air surrounding a solder resist opening over the tip of the protruding portion of the no-connect pad and a nearby solder resist opening over the surrounding metal provides a shortest air breakdown path and the lowest breakdown voltage. Alternatively, sharp features (e.g., metal traces) with a minimum separation distance can be arranged pointing at each other under the solder resist layer, or other dielectric layer inside the package, to provide a non-exposed breakdown path.
申请公布号 US2006044717(A1) 申请公布日期 2006.03.02
申请号 US20040932152 申请日期 2004.08.31
申请人 发明人 HILL MICHAEL J.;SHI WEIMIN
分类号 H02H9/00 主分类号 H02H9/00
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