| 发明名称 |
Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry |
| 摘要 |
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated circuitry such as memory integrated circuitry. |
| 申请公布号 |
US2006046426(A1) |
申请公布日期 |
2006.03.02 |
| 申请号 |
US20050200286 |
申请日期 |
2005.08.09 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;PATRAW ROBERT D.;ROBERTS M. CEREDIG;COOK KEITH R. |
| 分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
