| 摘要 |
A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, the method comprising the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the lower electrode layer on the buffer layer; performing oriented growth of ferroelectric member film to cover the buffer layer and the lower electrode layer; and removing a portion of the ferroelectric member film other than the portion having the oriented growth achieved along the pattern of the buffer layer, by means of an etching treatment. |
