发明名称 |
METHOD FOR FABRICATING THIN FILM TRANSISTOR |
摘要 |
<p>The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.</p> |
申请公布号 |
KR20060018533(A) |
申请公布日期 |
2006.03.02 |
申请号 |
KR20040066931 |
申请日期 |
2004.08.24 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
LEE, SANG WOONG;OH, JAE YOUNG;YANG, TAE HOON;SEO, JIN WOOK;LEE, KI YONG;YU, CHEOL HO |
分类号 |
H01L29/786;H01L21/318 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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