| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents the occurrence of field inversion and is advantageous to microfabrication. <P>SOLUTION: The semiconductor device comprises a plurality of high-voltage resistant insulating gate type field-effect transistors TR each of which is placed on the main surface of a semiconductor board 21 to form a matrix array, and has a gate electrode TG, a gate electrode contact 26 formed on the gate electrode TG, and a wiring layer 27 that is formed on the gate electrode contacts adjacent to each other in the gate widthwise direction and connects the gate electrodes TG in the gate widthwise direction. The semiconductor device also includes shielding gates 31 which are formed on element isolation regions STI between the transistors TR adjacent to each other in the gate lengthwise and gate widthwise directions, and apply a conductive voltage or reference voltage, which is different from a voltage applied to the gates to switch on current paths through the transistors TR, to the element isolation regions STI. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
