发明名称 |
SIC metal semiconductor field-effect transistors and methods for producing same |
摘要 |
A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.
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申请公布号 |
US2006043379(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040930584 |
申请日期 |
2004.08.31 |
申请人 |
ZHANG AN-PING;ROWLAND LARRY B;KRETCHMER JAMES W;TUCKER JESSE;KAMINSKY EDMUND B |
发明人 |
ZHANG AN-PING;ROWLAND LARRY B.;KRETCHMER JAMES W.;TUCKER JESSE;KAMINSKY EDMUND B. |
分类号 |
H01L21/338;H01L29/80 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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