| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces impact due to light proximity effects and easily enables wiring including pitch conversion in NAND flash memories. <P>SOLUTION: For example, when a flash memory 10 comprises a memory cell array 11 and a row decoder circuit 13 for controlling this cell array 11, two wires 22a and 22b, which are present at the memory cell array 11 and the row decoder circuit 13 and have different wiring pitches, are connected by a wire 22c drawn aslant with an angle of 30° at the space between the wire 22a and the wire 22b, because its wiring incidence angle P' with respect to the wiring 22a is determined to be 30°. In this way, a layer of wires 22, connecting two wires 22a and 22b via a wiring 22c drawn aslant with an angle of 30°, is formed between the memory cell array 11 and the row decoder circuit 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
