PATTERNING METHOD OF SEMICONDUCTOR LAYER, ELECTRONIC ELEMENT, ELECTRONIC ELEMENT ARRAY, DISPLAY

摘要

PROBLEM TO BE SOLVED: To provide a method for patterning a semiconductor layer of an element having an FET structure arbitrarily through simple production process at high speed with good maintainability without damaging an organic semiconductor material, and to provide an electronic element, an electronic element array, and a display. SOLUTION: A source electrode 5 and a drain electrode 6 are formed on a substrate 1 directly or through a gate insulation layer 4 to face each other. Critical surface tension of the gate insulation layer or the substrate in the region other than the source electrode and drain electrode forming regions has surface energy lower than that of the critical surface tension in each electrode forming region, and a patterned semiconductor layer 3 is formed by imparting a solution containing a semiconductor material to between the source electrode and the drain electrode. Electronic elements thus produced are arrayed and employed for constituting a display. COPYRIGHT: (C)2006,JPO&NCIPI