| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in the fracture resistance of an F-ASO and R-ASO without expanding the size of an element nor increasing the man-hour of a process and, at the same time, can suppress the rise of the Ron. SOLUTION: The semiconductor device comprises a first-conductivity semiconductor substrate 1, a first-conductivity epitaxial layer 2, and a first-conductivity high-concentration epitaxial layer 3. The device is also provided with a second-conductivity well region 5, a first-conductivity source region 7, and a source electrode 11 formed on the surfaces of the well and source regions 5 and 7. The device also comprises a second-conductivity channel region 6 which is lower in concentration than the well region 5, a gate electrode 9 provided on the surface of the channel region 6 through a gate insulating film 8, and an interlayer insulating film 10 which insulates the gate and source electrodes 9 and 11. Moreover, the device comprises a drain electrode 12 on the bottom surface of the semiconductor substrate 1, and a high-concentration diffusion region 4 which is arranged in the high-concentration epitaxial layer 3 near the surface of the layer 3 and is higher in concentration than the layer 3 adjacently to the channel region 6. COPYRIGHT: (C)2006,JPO&NCIPI
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