| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress plasma damage to the semiconductor device when a metal wiring layer is formed, and to provide a photomask. SOLUTION: The photomask M includes shielding patterns (metal wiring shielding units) 30b and 30c for forming metal wiring 20b and 20c; and a shielding pattern (discharge pattern shielding unit) 31 for forming a discharge pattern 21. The discharge pattern shielding unit 31 is provided near the metal wiring shielding unit 30c, and has a crest-shape projection part 31a projecting toward the metal wiring shielding unit 30c. Here, an interval D0 between the metal wiring shielding unit 30c and the vertex of the projection part 31a is set so that the interval D1 between the metal wiring forming part 40c and the vertex of the projection part 41a may become smaller than a minimum working interval E1 in a resist film R patterned by the photomask M. COPYRIGHT: (C)2006,JPO&NCIPI
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