| 摘要 |
PROBLEM TO BE SOLVED: To provide a content-addressable memory of small power consumption without any problem of reduction of an operation speed on an SOI board. SOLUTION: The content-addressable memory (CAM) is provided with a data memory part DM and a data comparing part DC. The data comparing part DC compares data mounted on a search line SL with data stored in the data memory part DM. In the case of mismatching, a match line ML precharged at an H level is discharged to be at an L level. In this case, the gate and body of NMOS transistors N6 and N8 constituting the data comparing part DC are short-circuited. When the gate and the body are short-circuited, the threshold voltage of the NMOS transistors N6 and N8 is lowered. Thus, even if voltage of the search line SL connected to the gate is lowered, the ON current of the NMOS transistors N6 and N8 can be increased, so that the match line ML can be discharged at high speed. As the result, the content-addressable memory without any problem of the reduction of the operation speed is realized even when the voltage of the search line SL is lowered for the reduction of power consumption. COPYRIGHT: (C)2006,JPO&NCIPI
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