| 摘要 |
The present invention is directed to realize both higher reading speed and assurance of the larger number of rewriting times for a nonvolatile memory. A semiconductor integrated circuit has a first nonvolatile memory area and a second nonvolatile memory area for storing information in accordance with a threshold voltage which varies. One or plural conditions out of erase verify determination memory gate voltage, erase verify determination memory current, write verify determination memory gate voltage, write verify determination memory current, erase voltage, erase voltage application time, write voltage, and write voltage application time in the first nonvolatile memory area is/are made different from that/those in the second nonvolatile memory area, speed of reading information stored in the first nonvolatile memory area is higher than that of reading information stored in the second nonvolatile memory area, and the assured number of rewriting times in the second nonvolatile memory area is larger than that in the first nonvolatile memory area.
|
